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Darlington transistor array BORN BULN2803LVS with common cathode clamp diodes supporting 500 milliamp output current

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Darlington transistor array BORN BULN2803LVS with common cathode clamp diodes supporting 500 milliamp output current

Product Overview

The BULN2803LVS is a 20 V, 500 mA Darlington transistor array from BORN SEMICONDUCTOR, INC. It features eight NPN Darlington pairs with common-cathode clamp diodes for switching inductive loads, supporting 1.8V low voltage input and single 500 mA output current. Designed for direct operation with TTL or 5-V CMOS devices, it includes a 2.7-k series base resistor for each Darlington pair. Applications include stepper motor drive, relay drive, display driver, and indicator drive.

Product Attributes

  • Brand: BORN SEMICONDUCTOR, INC.
  • Model: BULN2803LVS
  • Package: SOP-18
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified

Technical Specifications

ParameterValueUnit
General Features
Output Current (per channel)500mA
Collector-Emitter Voltage20V
Input Voltage Compatibility1.8V low voltage input, TTL/CMOS logic signal
Series Base Resistor2.7-k
Absolute Maximum Ratings (At 25C free-air temperature unless otherwise noted)
Collector to emitter voltage (VCE)20V
Input voltage (VI)20V
Peak collector current (ICP)500mA
Output clamp current (IOK)500mA
Total substrate-terminal current (ITE)-2.0A
Operating virtual junction temperature (TJ)-65 to 150C
Storage temperature range (TSTG)-65 to 150C
ESD Ratings
Human body model (HBM)2000V
Charged device model (CDM)500V
Recommended Operating Conditions
Collector-emitter voltage (V(CE))0 to 18V
Ambient temperature (T(A))-40 to 85C
Thermal Information (SOIC Package)
Junction-to-ambient thermal resistance (RJA)66.4C/W
Junction-to-case (top) thermal resistance (RJC(top))29.5C/W
Junction-to-board thermal resistance (RJB)33.0C/W
Junction-to-top characterization parameter (JT)6.0C/W
Junction-to-board characterization parameter (JB)32.5C/W
Electrical Characteristics (TA=+25C, unless otherwise specified)
Input current-on condition (VI(on)) (IC = 100 mA)2.0 to 2.1V
Input current-on condition (VI(on)) (IC = 200 mA)2.2 to 2.3V
Collector-emitter saturation voltage (VCE(sat)) (VI = 1.8V, IC = 100 mA)2.0 to 2.1V
Collector-emitter saturation voltage (VCE(sat)) (VI = 1.8V, IC = 200 mA)3.2 to 3.3V
Collector-emitter saturation voltage (VCE(sat)) (VI =3.3V, IC = 300 mA)1.5 to 1.6V
Collector-emitter saturation voltage (VCE(sat)) (VI =3.3V, IC = 500 mA)1.8 to 1.9V
Clamp diode forward Voltage (VF) (IF = 350 mA)1.4 to 1.6V
Output leakage current (ICEX) (VCE = 18V, IIN = 0V)to 50A
Output leakage current (VCE = 18V, VIN = 0V)to 100A
Input current (IIN) (VIN = 1.8V, IC = 250mA)0.6 to 1.2mA
Input current (IIN) (VIN = 2.4V, IC = 250mA)1.6 to 3.0mA
Input current (IIN) (VIN = 3.3V, IC = 250mA)3.2 to 4.5mA
Clamp reverse current (IR) (VR = 18 V)to 100A
Input capacitance (Ci) (VI = 0, f = 1 MHz)15pF
Propagation delay time, low-to-high-level output (tPLH) (VL = 5 V, RL = 45)0.12s
Propagation delay time, high-to-low-level output (tPHL) (VL = 5 V, RL = 45)0.12s
SOP18 Package Dimensions (mm)
Ato 2.65
A10.10 to 0.3
b0.31 to 0.51
c0.15 to 0.25
D11.35 to 11.75
E9.97 to 10.63
E17.40 to 7.60
e1.27BSC
L0.40 to 1.27
L10.20 to 0.33
0 to 8

2504101957_BORN-BULN2803LVS_C406219.pdf

Quality Darlington transistor array BORN BULN2803LVS with common cathode clamp diodes supporting 500 milliamp output current for sale
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