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Silicon Variable Capacitance Diode Infineon BB659C-02VH7908 with RoHS Compliance and Low Inductance

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Silicon Variable Capacitance Diode Infineon BB659C-02VH7908 with RoHS Compliance and Low Inductance

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Model Number :	BB659C-02VH7908

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Silicon Variable Capacitance Diode Infineon BB659C-02VH7908 with RoHS Compliance and Low Inductance

Product Overview

The BB639C/BB659C series are Silicon Variable Capacitance Diodes designed for tuning extended frequency bands in VHF TV/VTR tuners. These diodes feature a high capacitance ratio, low series inductance, and low series resistance. Their excellent uniformity and matching are achieved through an "in-line" matching assembly procedure. The components are Pb-free and RoHS compliant.

Product Attributes

Certifications: Pb-free (RoHS compliant)
Assembly Procedure: "in-line" matching

Technical Specifications

Model	Type	Package	Configuration	LS (nH)	Marking
BB639C	Diode	SOD323	single	1.8	yellow S
BB659C	Diode	SCD80	single	0.6	H
BB659C/-02V	Diode	SC79	single	0.6	HH

Parameter	Symbol	Value	Unit	Notes
Maximum Ratings at TA = 25C, unless otherwise specified
Diode reverse voltage	VR	30	V
Peak reverse voltage	VRM	35	V	(R 5k)
Forward current	IF	20	mA
Operating temperature range	Top	-55 ... 150	C
Storage temperature	Tstg	-55 ... 150	C
Electrical Characteristics at TA = 25C, unless otherwise specified
Reverse current	IR	-	10	nA (VR = 30 V)
Reverse current	IR	-	200	nA (VR = 30 V, TA = 85 C)
Diode capacitance	CT	36.5	pF	(VR = 1 V, f = 1 MHz)
Diode capacitance	CT	27	pF	(VR = 2 V, f = 1 MHz)
Diode capacitance	CT	2.5	pF	(VR = 25 V, f = 1 MHz)
Diode capacitance	CT	2.4	pF	(VR = 28 V, f = 1 MHz)
Diode capacitance	CT	39	pF	(VR = 1 V, f = 1 MHz)
Diode capacitance	CT	30.2	pF	(VR = 2 V, f = 1 MHz)
Diode capacitance	CT	2.72	pF	(VR = 25 V, f = 1 MHz)
Diode capacitance	CT	2.55	pF	(VR = 28 V, f = 1 MHz)
Diode capacitance	CT	42	pF	(VR = 1 V, f = 1 MHz)
Diode capacitance	CT	33.2	pF	(VR = 2 V, f = 1 MHz)
Diode capacitance	CT	3.05	pF	(VR = 25 V, f = 1 MHz)
Diode capacitance	CT	2.75	pF	(VR = 28 V, f = 1 MHz)
Capacitance ratio	CT1/CT28	14.2	-	(VR = 1 V, VR = 28 V, f = 1 MHz)
Capacitance ratio	CT1/CT28	15.3	-	(VR = 1 V, VR = 28 V, f = 1 MHz)
Capacitance ratio	CT2/CT25	9.5	-	(VR = 2 V, VR = 25 V, f = 1 MHz)
Capacitance ratio	CT2/CT25	11.1	-	(VR = 2 V, VR = 25 V, f = 1 MHz)
Capacitance matching	CT/CT	-	0.3	% (VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB639C)
Capacitance matching	CT/CT	-	0.5	% (VR = 1V to 28V, f = 1 MHz, 4 diodes sequence, BB659C/-02V)
Capacitance matching	CT/CT	-	2.5	% (VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB659C/-02V)
Capacitance matching	CT/CT	-	1	% (VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB659C)
Series resistance	rS	-	0.6	(VR = 5 V, f = 470 MHz)
Series resistance	rS	-	0.7	(VR = 5 V, f = 470 MHz)
Series inductance	LS	-	0.6	nH

Package Information

Package Type	Dimensions (mm)	Reel Size	Pieces per Reel
SC79	0.8 x 1.3 x 0.4 (approx.)	180 mm	3.000
SCD80	1.7 x 1.45 x 0.35 (approx.)	180 mm	8.000
SOD323	N/A	330 mm	10.000

Marking

Marking details vary by model and package. Refer to the datasheet for specific laser marking and date code information.

2411200037_Infineon-BB659C-02VH7908_C3272459.pdf

Silicon Variable Capacitance Diode Infineon BB659C-02VH7908 with RoHS Compliance and Low Inductance

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