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Integrated power module onsemi NFAM3065L4B with high side gate driver and bootstrap diode protection

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Integrated power module onsemi NFAM3065L4B with high side gate driver and bootstrap diode protection

Intelligent Power Module (IPM), 650 V, 30 A - NFAM3065L4B

The NFAM3065L4B is a fully-integrated inverter power module designed for driving permanent magnet synchronous (PMSM), brushless DC (BLDC), and AC asynchronous motors. It features an independent High side gate driver, LVIC, six IGBTs, and a temperature sensor. The module's three-phase bridge configuration with separate emitter connections for lower legs offers flexibility in control algorithms. Key advantages include built-in undervoltage lockout protection (UVP) and integrated bootstrap diodes.

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (onsemi)
  • Product Code: NFAM3065L4B
  • Certifications: UL1557 Certified (File No.339285)
  • Compliance: PbFree and RoHS Compliant

Technical Specifications

ParameterConditionsMinTypMaxUnit
General Specifications
Supply Voltage (VPN)PNU, NV, NW-300400V
Gate Driver Supply Voltages (VDD)VDD(UH,VH,WH), VDD(L)VSS13.51516.5V
High-Side Control Bias Voltage (VBS)VB(U)VS(U), VB(V)VS(V), VB(W)VS(W)13.01518.5V
PWM Frequency (fPWM)-1-20kHz
Dead Time (DT)Turn-off to Turn-on (external)1.5--µs
Allowable r.m.s. Current (Io)VPN = 300 V, VDD = 15 V, P.F. = 0.8, Tc ≤ 125°C, Tj ≤ 150°C--25.7 (fPWM = 5 kHz)A rms
Allowable r.m.s. Current (Io)VPN = 300 V, VDD = 15 V, P.F. = 0.8, Tc ≤ 125°C, Tj ≤ 150°C--18.8 (fPWM = 15 kHz)A rms
Inverter Section
Collector-Emitter Voltage (VCES)---650V
Collector Current (Ic)Each IGBT--±30A
Collector Current Peak (Icp)Each IGBT (Under 1 ms Pulse Width)--±60A
Collector-Emitter Saturation Voltage (VCE(sat))Ic = 30 A, Tj = 25°C-1.602.30V
Collector-Emitter Saturation Voltage (VCE(sat))Ic = 30 A, Tj = 150°C-1.80-V
Forward Voltage (VF)If = 30 A, Tj = 25°C-2.002.40V
Forward Voltage (VF)If = 30 A, Tj = 150°C-2.00-V
High side Switching Times (ton)Ic = 30 A, Tj = 25°C, Inductive Load-0.801.85µs
High side Switching Times (toff)Ic = 30 A, Tj = 25°C, Inductive Load-1.602.20µs
Low side Switching Times (ton)Ic = 30 A, Tj = 25°C, Inductive Load-0.802.00µs
Low side Switching Times (toff)Ic = 30 A, Tj = 25°C, Inductive Load-1.602.20µs
Driver Section
Quiescent VDD Supply Current (IQDDH)High-Side--0.30mA
Quiescent VDD Supply Current (IQDDL)Low-Side--3.50mA
Operating VDD Supply Current (IPDDH)High-Side, fPWM = 20 kHz, Duty = 50%--0.40mA
Operating VDD Supply Current (IPDDL)Low-Side, fPWM = 20 kHz, Duty = 50%--6.00mA
Quiescent VBS Supply Current (IQBS)---0.30mA
Operating VBS Supply Current (IPBS)fPWM = 20 kHz, Duty = 50%--5.00mA
ON Threshold Voltage (VIN(ON))---2.6V
OFF Threshold Voltage (VIN(OFF))-0.8--V
Short Circuit Trip Level (VCIN(ref))VDD = 15 V0.460.480.50V
Under-Voltage Protection (UVDDD)Detection Level10.3-12.5V
Thermal Characteristics
Junction-to-Case Thermal Resistance (Rth(j-c)Q)Inverter IGBT Part (per 1/6 module)--1.1°C/W
Junction-to-Case Thermal Resistance (Rth(j-c)F)Inverter FWD Part (per 1/6 module)--2.2°C/W

Typical Applications

  • Industrial Drives
  • Industrial Pumps
  • Industrial Fans
  • Industrial Automation

2411272252_onsemi-NFAM3065L4B_C604138.pdf

Quality Integrated power module onsemi NFAM3065L4B with high side gate driver and bootstrap diode protection for sale
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